By Arjun Mandal,Subhananda Chakrabarti
This publication seems on the results of ion implantation as an efficient post-growth strategy to enhance the fabric homes, and eventually, the gadget functionality of In(Ga)As/GaAs quantum dot (QD) heterostructures. over the last 20 years, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, relatively for software in lasers and photodetectors. a number of in-situ and ex-situ recommendations that increase fabric caliber and machine functionality have already been suggested. those strategies are essential to keep dot density and dot measurement uniformity in QD heterostructures and in addition to enhance the cloth caliber of heterostructures through removing defects from the process. whereas fast thermal annealing, pulsed laser annealing and the hydrogen passivation method were well known as post-growth tools, ion implantation had no longer been explored principally as a post-growth strategy for making improvements to the fabric houses of In(Ga)As/GaAs QD heterostructures. This paintings makes an attempt to therapy this hole within the literature. The paintings additionally seems to be at advent of a capping layer of quaternary alloy InAlGaAs over those In(Ga)As/GaAs QDs to accomplish greater QD characteristics. The contents of this quantity will turn out beneficial to researchers and pros thinking about the learn of QDs and QD-based devices.
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Impact of Ion Implantation on Quantum Dot Heterostructures and Devices by Arjun Mandal,Subhananda Chakrabarti